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| 2N7002T Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT-523 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) Symbol VDSS VDGR VGS VGSM Value 60 60 20 40 Unit Vdc Vdc Vdc Vpk 1 N-Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 3.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 150 1.8 833 -55 to +150 Unit mW mW/C C/W C 2 3 1 2 2 RJA TJ, Tstg SOT-523 MARKING DIAGRAM & PIN ASSIGNMENT Drain 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 3 72 2 Gate Source SOT-523 Dim A B C D G H J K L S V Min 1.500 0.750 72 = Device Code Max 1.700 0.850 0.900 0.300 1.100 0.100 0.200 0.300 0.600 1.750 0.350 D H K J C V 1 3 2 A L 0.600 0.150 0.900 0.000 0.100 0.100 0.400 1.450 0.250 BS G All Dimension in mm http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2N7002T Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 - - - - - - - - - - 1.0 500 10 -10 Vdc Adc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C Forward Transconductance (VDS = 10 V, ID = 200 mAdc) VGS(th) ID(on) 1.0 0.5 - 1 2.0 - Vdc A Ohms 13.5 7.5 - ms R DS(on) gFS - - 80 - - - DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss - - - - - - 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Turn-Off Delay Time (VDD = 30 Vdc, ID ^ 200 mAdc, 25 500 RG = 25 , RL = 150 , Vgen = 10 V) td(on) td(off) - - - - 20 20 ns ns http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2N7002T Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 1 VGS = 5V 0.9 ID, DRAIN-SOURCE CURRENT (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VGS = 5, 6, 7, 10V VGS = 10,7,6V VGS = 4V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3V 1.8 1.4 VGS = 4V VGS = 3V 1 0 0 1 2 3 4 5 0.6 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current 1.2 VGS(th), NORMALIZED THRESHOLD VOLTAGE 2.2 RDS(ON), NORMALIZED ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 1.1 VGS = 10V ID = 500mA 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 3 Gate Threshold Variation with Temperature TJ, JUNCTION TEMPERATURE (C) Fig. 4 On-Resistance Variation with Temperature 60 5.0 4.5 50 4.0 C, CAPACITANCE (pF) 40 3.5 3.0 30 2.5 2.0 ID = 50mA 20 Ciss 1.5 Coss 10 1.0 0.5 Crss 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 0.0 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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